型号:

IXFH12N120P

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 1200V 12A TO-247
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXFH12N120P PDF
标准包装 30
系列 Polar™ HiPerFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 1200V(1.2kV)
电流 - 连续漏极(Id) @ 25° C 12A
开态Rds(最大)@ Id, Vgs @ 25° C 1.35 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大) 6.5V @ 1mA
闸电荷(Qg) @ Vgs 103nC @ 10V
输入电容 (Ciss) @ Vds 5400pF @ 25V
功率 - 最大 543W
安装类型 通孔
封装/外壳 TO-247-3
供应商设备封装 TO-247
包装 管件
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